Sr (Strontium) Further studies by Osmer et al in 1989 found antimony doping can improve the high temperature transmission of Ge, between 70-120°C at the expense of degraded room temperature performance across the 8-12µm region. AlN (Aluminium nitride) NaI (Sodium iodide) Germanium is a high index material that is used to manufacture Attenuated Total Reflection (ATR) prisms for spectroscopy. NH4H2PO4 (Ammonium dihydrogen phosphate, ADP) K (Potassium) Re (Rhenium) 1976: n 2.5-12 µm; 293 K Li 1980: n 1.9-18 µm; 350 K Y3Al5O12 (Yttrium aluminium garnet, YAG) Pd (Palladium) Rev. Li 1980: n 1.9-18 µm; 250 K Data 9, 561-658 (1993), [CSV - comma separated] Nb2O5 (Niobium pentoxide) PbTe (Lead telluride) Fe2O3 (Iron sesquioxide, Hematite) Bi12GeO20 (Bismuth germanate, BGO) AgBr (Silver bromide) ZnSiAs2 (Zinc silicon arsenide) Mo (Molybdenum) If you continue without changing your settings, we'll assume PbMoO4 (Lead Molybdate) Os (Osmium) Sn (Tin) Se (Selenium) PbF2 (Lead difluoride) Aspnes and Studna 1983: n,k 0.21-0.83 µm Ge optical components (lenses, filters, beamsplitters etc.) Be (Beryllium) Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV, Phys. RbTiOPO4 (Rubidium titanyl phosphate, RTP) GLASS - glasses LaF3 (Lanthanum fluoride) Xe (Xenon) Hf (Hafnium) Germanium is a chemical element with the symbol Ge and atomic number 32. Mo (Molybdenum) CdGeAs2 (Cadmium germanium arsenide) Ciesielski et al. ZnTe (Zinc telluride) Hg (Mercury) B 27, 985-1009 (1983), [CSV - comma separated] SrMoO4 (Strontium molybdate) Pt (Platinum) Li 1980: n 1.9-18 µm; 250 K Li 1980: n 1.9-18 µm; 293 K Radio Eng. Ta2O5 (Tantalum pentoxide) For a typical sample of Ge the refractive index and extinction coefficient at 632.8 nm are 5.47661 and 0.7842102. ZnO (Zinc monoxide) The short wavelength cut-off corresponds to an energy gap between 0.68eV at 300K to 0.83eV at 50K and a transmission level of approximately 47% from a refractive index of ~ 4.0. For the absorption to occur, these processes must coincide jointly to retain the conservation of energy and momentum. CS2 (Carbon disulfide) Germanium (Ge) Germanium has proved to be the most useful semiconductor substrate for applications as a window or lens material in the 1.6 - 18µm region. Due to the low transmission and the high index of refraction of Germanium as an uncoated Optical constants of Y 2 O 3 (Yttrium sesquioxide) Nigara 1968: n 0.25-9.6 µm. MgAl2O4 (Magnesium aluminate, spinel) SiO (Silicon monoxide) Germanium covers the whole of the 8-14 micron thermal band and is used in lens systems for thermal imaging. Si3N4 (Silicon nitride) By using this site, you agree to our updated Privacy Policy and our Cookie Policy. They also found that the absorption increased with increasing temperature. BP (Boron phosphide) MgH2 (Magnesium hydride) Dy2O3 (Dysprosium sesquioxide) CdTe (Cadmium telluride) Cs (Caesium) To download this data or our MSDS safety data sheet as a pdf, please click on the links at the top of the page. Ne (Neon) Au (Gold) Germanium is grown using the Czochralski technique by a small number of manufacturers in Belgium, USA, China and Russia. SrTiO3 (Strontium titanate, STO) BeO (Beryllium monoxide) Shelf. Book Page. CdS (Cadmium sulfide) ZnSiAs2 (Zinc silicon arsenide) Li 1980: n 1.9-18 µm; 550 K Germanium can be AR coated with Diamond producing an extremely tough front optic. Li (Lithium) The principal region of transparency extends from ~1.8-18µm at 300K extending to ~1.5-18µm at 50K. SiC (Silicon carbide) Cu (Copper) MgH2 (Magnesium hydride) KTiOPO4 (Potassium titanyl phosphate, KTP) LiBr (Lithium bromide) Os (Osmium) Calvin D. Salzberg and John J. Villa, "Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*," J. Opt. ZrO2 (Zirconium dioxide, Zirconia) 2018: 20 nm film; n,k 0.2-2 µm Lu2O3 (Lutetium sesquioxide) Soc. CdTe (Cadmium telluride) For a typical sample of Ge the refractive index Yb2O3 (Ytterbium sesquioxide) Bi4Ti3O12 (Bismuth titanate, BTO) Pb5Ge3O11 (Lead germanate, PGO) RbBr (Rubidium bromide) PbTiO3 (Lead titanate) PbF2 (Lead difluoride) BaB2O4 (Barium borate, BBO) MoTe2 (Molybdenum ditelluride) It is a lustrous, hard, grayish-white metalloid in the carbon group, chemically similar to its group neighbors tin and silicon. GaN (Gallium nitride) Ge (Germanium) MgO (Magnesium monoxide) PbI2 (Lead iodide) If the file is not available for download, you can request our proprietary file by clicking GaSb (Gallium antimonide) However, excessive addition leads to higher electron concentration and subsequent increased absorption. BiFeO3 (Bismuth ferrite, BFO) GaSb (Gallium antimonide) He (Helium) KTaO3 (Potassium tantalate) Bi4Ge3O12 (Bismuth germanate, BGO) PbS (Lead sulfide) Li 1980: n 1.9-18 µm; 400 K Cs (Caesium) [TXT - tab separated] LiCaAlF6 (Lithium calcium aluminum fluoride, LiCAF) ZnS (Zinc sulfide) Mon-Fri), +1 858-573-9300 Te (Tellurium) AlAs (Aluminium arsenide) However, doping to lower n-type resistivities can make it useful at temperatures as high as 80°C. Li 1980: n 1.9-18 µm; 450 K Both germanium and silicon have a diamond type structure, where each atom is surrounded by four adjacent atoms occupying the corner points of a tetrahedron, to which it is bound by covalently bonded electron paired bonds. YbF3 (Ytterbium trifluoride) Li (Lithium) LuAl3(BO3)4 (Lutetium aluminium borate, LuAB) Mn (Manganese) Sc (Scandium) 47, 244-246 (1957) Export Citation BibTex VN (Vanadium nitride) LiI (Lithium iodide) MoO3 (Molybdenum trioxide) InSb (Indium antimonide) Ti (Titanium) Absorption of n-type single crystal material was originally found by Capron and Brill in 1973, to be superior to that of p-type germanium from ninety two samples investigated with resistivities ranging from 0.9Ωcm to 57Ωcm. LiF (Lithium fluoride) Hg (Mercury) ThF4 (Thorium tetrafluoride) Sc2O3 (Scandium sesquioxide) Chem. The germanium-doped fiber is photosensitive, which means that the refractive index of the core changes with exposure to UV light. AlSb (Aluminium antimonide) Eu (Europium) Fe (Iron) Au (Gold) Hf (Hafnium) CsLiB6O10 (Cesium lithium borate, CLBO) TlBr (Thallium bromide) H2O, D2O (Water, heavy water, ice) Germanium has proved to be the most useful semiconductor substrate for applications as a window or lens material in the 1.6 - 18µm region. TiC (Titanium carbide) The standard uncertainty for the measurements ranges from 1.5 x 10^-5 to 4.2 x 10^-5, generally increasing with wavelength. InAs (Indium arsenide) Bi (Bismuth) Ho (Holmium) BaF2 (Barium fluoride) CeF3 (Cerium trifluoride) GaSe (Gallium selenide) Barnes and Piltch utilised this data to derive a fitted temperature-dependent modified Sellmeier equation (1-8) and published the following values for the coefficients in 1979. CO2 (Carbon dioxide) LiB3O5 (Lithium triborate, LBO) Yb (Ytterbium) Pb (Lead) Pb5Ge3O11 (Lead germanate, PGO) Si (Silicon) The maximum transmittance derived from this experiment, at 300K and 10.6µm, was for samples doped with antimony to a resistivity of 5-10Ωcm with n-type conductivity producing an absorption coefficient of 0.02cm-1 . NH3 (Ammonia) GaS (Gallium sulfide)
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